B647 Datasheet – 2SB647 Silicon PNP Transistor

Part Number: B647, 2SB647

Function: -120V, -1A, PNP Transistor

Package: TO-92MOD Type

Manufacturer: Hitachi Semiconductor

Images:B647 pinout datasheet

Description

The B647 is -120V, -1A, PNP Transistor.

Features:

• Low frequency power amplifier
• Complementary pair with 2SD667/A Outline

1. Emitter 2. Collector 3. Base 3 2 1 2SB647,

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = -120 V
2. Collector to Emitter Voltage: Vceo = -80 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 1A
5. Collector Dissipation: Pc = 0.9 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Electrical Characteristics (Ta = 25°C) 2SB647

Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1- hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max Min — 10 320 — 1 Typ Max Unit

 

Notes:

1. The 2SB647 and 2SB647A are grouped by h FE1 as follows.

2. Pulse test B 2SB647 2SB647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — 2 2SB647, 2SB647A Maximum Collector Dissipation Curve

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B647 pdf

B647 PDF Datasheet