This post explains for the transistor.
The Part Number is C4212, 2SC4212.
The function of this semiconductor is 300V, 200mA, NPN Transistor.
The package is TO-126B Type
Manufacturer: Panasonic Semiconductor
Preview images :
The C4212 is 300V, 200mA, NPN Transistor.
A silicon NPN triple diffusion planar type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) constructed using silicon material and triple diffusion planar fabrication techniques. It is a three-terminal semiconductor device commonly used for amplification and switching applications in electronic circuits.
1. NPN BJT: The transistor consists of an N-type emitter, a P-type base, and an N-type collector. It operates by controlling the current flow between the collector and emitter terminals through the application of a voltage at the base terminal.
2. Silicon Planar Technology: The transistor is constructed using silicon material and planar fabrication techniques. Planar technology involves the creation of multiple layers of semiconductors, insulators, and conductors on a flat surface, resulting in improved performance and manufacturability.
3. Triple Diffusion Process: The triple diffusion process refers to the creation of multiple doped regions through successive diffusion steps in the semiconductor material. This process allows for precise control over the doping concentrations and locations, enhancing the performance characteristics of the transistor.
4. Amplification and Switching: The silicon NPN triple diffusion planar type transistor can be used for both amplification and switching purposes. It can amplify weak electrical signals and control the flow of current in electronic circuits.
• High collector to emitter voltage VCEO
• TO-126B package which requires no insulation plate for installation to the heat sink […]
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 350 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 7.5 V
4. Collector Current: Ic = 200 mA
5. Collector Dissipation: Pc = 1.2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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