This post explains for the transistor.
The Part Number is C4544, 2SC4544.
The function of this semiconductor is 300V, 100mA, NPN Transistor.
The package is TO-220 Type
Preview images :
The C4544 is 300V, 100mA, NPN Transistor.
A silicon NPN triple diffusion planar type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) constructed using silicon material and triple diffusion planar fabrication techniques. It is a three-terminal semiconductor device commonly used for amplification and switching applications in electronic circuits.
Here are some key features and characteristics of a silicon NPN triple diffusion planar type transistor:
NPN BJT: The transistor consists of an N-type emitter, a P-type base, and an N-type collector. It operates by controlling the current flow between the collector and emitter terminals through the application of a voltage at the base terminal.
Silicon Planar Technology: The transistor is constructed using silicon material and planar fabrication techniques. Planar technology involves the creation of multiple layers of semiconductors, insulators, and conductors on a flat surface, resulting in improved performance and manufacturability.
Triple Diffusion Process: The triple diffusion process refers to the creation of multiple doped regions through successive diffusion steps in the semiconductor material. This process allows for precise control over the doping concentrations and locations, enhancing the performance characteristics of the transistor.
• High voltage: V (BR) CEO = 300 V
• Small collector output capacitance: Cob = 3.0 pF (typ.)
• Collector metal (fin) is fully covered with mold resin.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 300 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 100 mA
5. Collector Dissipation: Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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