NEC

J599 PDF Datasheet – P-Ch, MOSFET – 2SJ599 – NEC ( PDF )

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This post explains for the transistor J599.

The Part Number is 2SJ599.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-251, TO-252 Type

Manufacturer: NEC

Preview images :

1 page
J599 transistor pinout

Description

The J599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.

The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.

The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.

Features

• Low on-state resistance :

(1) RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)

(2) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)

• Low Ciss: Ciss = 1300 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package 2SJ599-Z

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Channel dissipation: Pch = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2 page
J599 pdf datasheet

J599 PDF Datasheet

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C3355 PDF Datasheet – 12V, 100mA, NPN Transistor – NEC

Posted on by pinout

This post explains for the transistor.

The Part Number is C3355, 2SC3355.

The function of this semiconductor is 12V, 100mA, NPN Transistor.

The package is TO-92 Type

Manufacturer: NEC

Preview images :

1 page
C3355 pinout pdf

Description

This is 12V, 100mA, Silicon NPN Transistor. C3355 Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

 

2 page
C3355 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 12 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Pt = 600 mw

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

C3355 Transistor PDF

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