This post explains for the NPN transistor.

The Part Number is C4138, C4138.

The function of this semiconductor is 400V, 10A, NPN Transistor.

The package is TO-3P Type

Manufacturer: Sanken electric

Preview images :

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Description

The C4138 is 400V, 10A, Silicon NPN Triple Diffused Planar Transistor. This is High Voltage and High Speed Switchihg Transistor.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 80 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application:

1. Switching Regulator and General Purpose

C4138 PDF Datasheet

This post explains for the transistor.

The Part Number is C3890, 2SC3890.

The function of this semiconductor is 400V, 7A, NPN Transistor.

The package is TO-220F Type

Manufacturer: Sanken electric

Preview images :

Description

The C3890 transistor is Silicon NPN Triple Diffused Planar Transistor.

This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Features

1. High Voltage and High Speed Switchihg Transistor

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Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 7 A

5. Collector Dissipation : Pc = 30 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. Switching Regulator and General Purpose

 

C3890 Transistor Datasheet

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