IRF5305 Datasheet – 55V, 31A, P-Channel MOSFET

What is IRF5305?

This is a Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in electronic circuits for switching and amplification applications. It is an P-channel MOSFET with a voltage rating of -55V and a current rating of -31A.

Function: -55V, -31A, P-Channel MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier

Image and Pinouts

IRF5305 datasheet pdf

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advantages

1. The low on-state resistance allows for efficient power management and reduces power loss.

2. The high current and voltage rating make it suitable for high-power applications.

3. It has a fast switching speed, making it ideal for use in high-frequency applications.

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. P-Channel

6. Fully Avalanche Rated

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = -55V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = -31A

4. Drain Power Dissipation: Pd = 110 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

IRF5305 Datasheet

LM1875 pdf

 

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LM1875 Datasheet – 20W Audio Power Amplifier

What is LM1875?

This IC is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications.

Part Number: LM1875

Function: 20W Audio Power Amplifier

Package: TO-220 Type

Manufacturer: National Semiconductor was acquired by Texas Instruments (TI) on September 23, 2011.

Image

LM1875 audio power amplifier

Description :

The LM1875 design takes advantage of advanced circuit techniques and processing to achieve extremely low distortion levels even at high output power levels. Other outstanding
features include high gain, fast slew rate and a wide power bandwidth, large output voltage swing, high current capability, and a very wide supply range.

One of the key advantages of the LM1875 is its high output power capability, which makes it suitable for driving large speakers and for use in high-power audio systems. Additionally, its low distortion and wide bandwidth result in high-quality sound reproduction. However, the IC requires a higher supply voltage than some other audio amplifier ICs, which may limit its use in low-voltage applications.

Advantages

1. Deliver up to 20 watts of output power per channel.

2. Simple circuit design that requires only a few external components.

3. Built-in thermal shutdown feature to prevent damage to the IC and connected components.

4. Suitable for high-fidelity audio applications, stereo amplifiers, home theater systems, and active speakers.

5. Built-in thermal shutdown feature that helps to prevent damage to the IC and the connected components.

6. Low distortion, high slew rate, and wide bandwidth, resulting in high-quality sound reproduction.

Pinout:

LM1875 pinout datasheet

Features

1. Up to 30 watts output power
2. AVO typically 90 dB
3. Low distortion: 0.015%, 1 kHz, 20 W
4. Wide power bandwidth: 70 kHz
5. Protection for AC and DC short circuits to ground
6. Thermal protection with parole circuit
7. High current capability: 4A
8. Wide supply range 16V-60V
9. Internal output protection diodes
10. 94 dB ripple rejection

Applications:

1. High performance audio systems
2. Bridge amplifiers
3. Stereo phonographs
4. Servo amplifiers
5. Instrument systems

 

FAQs:

1. What is the difference with LM3875?

The LM3875 is a higher-power version of LM1875, capable of delivering up to 56 watts of output power per channel. LM3875 also has a wider supply voltage range of 20V to 84V DC.

LM1875 Datasheet

LM1875 pdf

 

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