STMicroelectronics Archives - DataSheetCafe.com

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: STP55NF06, Marking : P55NF06

Function: N-CHANNEL 60V – 0.015 Ω- 50A STripFET II POWER MOSFET

Package: TO-220, D2PAK, TO-220FP Type

Manufacturer: ST Microelectronics

Image

Description

The P55NF06 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ST Microelectronics, NXP Semiconductors. Power MOSFETs are commonly used in a variety of power conversion and switching applications, including power supplies, motor drives, and switching power amplifiers.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.015 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. HIGH CURRENT, HIGH SWITCHING SPEED

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE

Other data sheets are available within the file: STB55NF06, STP55NF06

P55NF06 Datasheet PDF

Posts related to ‘ MOSFET ‘

Part number	Description
70T03H	70T03H PDF – 30V, 60A, MOSFET (SSM70T03H)
BUZ81	800V, 4A, Power MOSFET – Siemens
K1167	450V, 15A, N-Ch, MOSFET – Hitachi
2SK2415	2SK2415 MOSFET – 60V, 8A Transistor ( Datasheet PDF )
RA13H8891MA	3W, RF MOSFET Amplifier
FQP13N10	100V, 12.8A, N-Ch, MOSFET
F2HNK60Z	F2HNK60Z PDF – STF2HNK60Z, 600V, 2A, MOSFET
10N60C	10N60C Transistor – FQP10N60C ( 600V, MOSFET )
QM3002M3	QM3002M3 PDF – N-Ch, 30V, 28A, Fast Switching MOSFET
18N20GH	18N20GH PDF – 200V, 18A, N-Ch, MOSFET, AP18N20GH

Description

This Power Mosfet series realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Pinout

Features

1. TYPICAL RDS(on) = 0.014Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. APPLICATION ORIENTED CHARACTERIZATION

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Total Dissipation: Pd = 110 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

P60NF06 Datasheet

Posts related to ‘ MOSFET ‘

Part number	Description
IRF840	Power MOSFET, TO-220AB – Vishay
K30N60HS	600V, 30A, MOSFET, Transistor
2SK2085	2SK2085 MOSFET – 100V, 1A, Transistor ( Datasheet PDF )
MAX8791	Synchronous MOSFET Driver
2SK1277	2SK1277 MOSFET – 250V, 30A, Transistor ( Datasheet PDF )
4N60B	600V, 4A, N-Ch, Power MOSFET
CSD17483F4	30V, N-Ch, MOSFET, Transistor
ZXMN3A02N8	30V, 9A, N-Ch, MOSFET
K3566	N-Ch, 900V, 2.5A, MOSFET – 2SK3566
K11A60D	K11A60D PDF – 600V, MOSFET, Transistor (TK11A60D)