P55NF06 Datasheet PDF – 60V, 50A, N-ch, Power MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: STP55NF06, Marking : P55NF06

Function: N-CHANNEL 60V – 0.015 Ω- 50A STripFET II POWER MOSFET

Package: TO-220, D2PAK, TO-220FP Type

Manufacturer: ST Microelectronics

Image

P55NF06 mosfet

Description

The P55NF06 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ST Microelectronics, NXP Semiconductors. Power MOSFETs are commonly used in a variety of power conversion and switching applications, including power supplies, motor drives, and switching power amplifiers.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.015 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

Pinout

P55NF06 datasheet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. HIGH CURRENT, HIGH SWITCHING SPEED

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE

 

Other data sheets are available within the file: STB55NF06, STP55NF06

P55NF06 Datasheet PDF

P55NF06 pdf

 

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P60NF06 Datasheet – 60V, 60A, Power MOSFET – ST ( PDF )

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: P60NF06, STP60NF06

Function : N-Channel, 60V, 0.014Ohm, 60A, Power MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: ST Microelectronics

Image

P60NF06 mosfet st

 

Description

This Power Mosfet series realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

 

Pinout

P60NF06 datasheet pinout

 

Features

1. TYPICAL RDS(on) = 0.014Ω

2.  EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4.  APPLICATION ORIENTED CHARACTERIZATION

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Total Dissipation: Pd = 110 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

P60NF06 Datasheet

 

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