Part Number: H5N1503P
Function: Vdss = 150V, Id = 70A, Silicon, N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Renesas Electronics
Pinouts:
Description
– Low on-resistance
– Low leakage current
– High speed switching
Absolute maximum ratings ( Ta=25°C )
1. Drain to Source voltage VDSS 150 V
2. Gate to Source voltage VGSS ±30 V
3. Drain current ID 70 A
4. Drain peak current ID (pulse) 210 A
5. Body-Drain diode reverse Drain current IDR 70 A
6. Avalanche current IAP 35 A
7. Avalanche energy EAR 91.8 mJ
8. Channel dissipation Pch 150 W
9. Channel to case thermal impedance θch-c 0.833 °C/W
10. Channel temperature Tch 150 °C
11. Storage temperature Tstg –55 to +150 °C
Other data sheets are available within the file: H5N1503P-E