Part Number: IRFR420B
Function: 500V, N-Channel MOSFET
Package: D-PAK, I-PAK Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
1. 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
2. Low gate charge ( typical 14 nC)
3. Low Crss ( typical 10 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
IRFR420BAbsolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2.3 A
4. Power Dissipation: Pd = 2.5 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRFR420, IRFU420B
IRFR420B Datasheet PDF Download
