K2699 PDF Datasheet – 600V, N-ch MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K2699, 2SK2699.

The function of this semiconductor is 600V, 12A, MOSFET.

The package is TO-3P Type

Manufacturer: Toshiba Semiconductor

Preview images :

1 page
K2699 image

Description

This is N Channel MOS Type Field Effect Transistor.

Applications:

1. Chopper Regulator

2. DC−DC Converter and Motor Drive

Features

1. Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.)

2. High forward transfer admittance : : |Yfs| = 11 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)

4. Enhancement mode :   Unit: mm :  : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

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K2699 Datasheet