Part Number: K9F2G08U0B
Function: 256M x 8 Bit NAND Flash Memory
Package: TSOP 48 Pin
Manufacturer: Samsung
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Description
Offered in 256Mx8bit, the K9F2G08U0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
Pinout
Features
1. Voltage Supply
(1) 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
(2) 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
2. Organization
(1) Memory Cell Array : (256M + 8M) x 8bit
(2) Data Register : (2K + 64) x 8bit
3. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (128K + 4K)Byte
4. Page Read Operation
(1) Page Size : (2K + 64)Byte
(2) Random Read : 25µs(Max.)
(3) Serial Access : 25ns(Min.)
5. Command/Address/Data Multiplexed I/O Port
K9F2G08U0B Datasheet PDF Download
Other data sheets are available within the file: K9F2G08B0B-P, K9F2G08U0B, K9F2G08U0BP
