K9G4G08U0B Datasheet PDF – 4G-bit NAND Flash Memory

Part Number: K9G4G08U0B

Function: 51nm, 4G-bit NAND Flash Memory

Package: TSOP 48 Pin

Manufacturer: Samsung


K9G4G08U0B datasheet



4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.


1. NAND Flash – TSOP48 – MLC 4GB

2. Voltage Supply
(1) 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
(2) 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V

3. Organization
(1) Memory Cell Array : (512M + 16M) x 8bit
(2) Data Register : (2K + 64) x 8bit

4. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (256K + 8K)Byte


Reference Page : https://www.elnec.com/en/device/Samsung/K9G4G08U0B+%5bTSOP48%5d/

Other data sheets are available within the file: K9G4G08U0B-PCB0


K9G4G08U0B Datasheet PDF Download

K9G4G08U0B pdf