Part Number: K9G4G08U0B
Function: 51nm, 4G-bit NAND Flash Memory
Package: TSOP 48 Pin
Manufacturer: Samsung
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Description
4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
Features
1. NAND Flash – TSOP48 – MLC 4GB
2. Voltage Supply
(1) 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
(2) 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
3. Organization
(1) Memory Cell Array : (512M + 16M) x 8bit
(2) Data Register : (2K + 64) x 8bit
4. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (256K + 8K)Byte
Reference Page : https://www.elnec.com/en/device/Samsung/K9G4G08U0B+%5bTSOP48%5d/
Other data sheets are available within the file: K9G4G08U0B-PCB0
K9G4G08U0B Datasheet PDF Download
