Part Number: K9HBG08U1M
Function: 4GBx8, 32G-bit NAND Flash Memory
Package: TSOP 48 Pin, TLGA 52 Pin Type
Type : MLC Type
Manufacturer: Samsung
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Description
The K9LAG08U0M is a 32G-bit NAND Flash Memory
Offered in 4Gx8bit, the K9LAG08U0M is a 32G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0M′s extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
Features
1. Voltage Supply : 2.7 V ~ 3.6 V
2. Organization
(1) Memory Cell Array : (2G + 64M)bit x 8bit
(2) Data Register : (2K + 64)bit x8bit
3. Automatic Program and Erase
(1) Page Program : (2K + 64)Byte
(2) Block Erase : (256K + 8K)Byte
Other data sheets are available within the file:
K9HBG08U1M-I, K9LAG08U0M-P, K9MCG08U5M-P
K9HBG08U1M Datasheet PDF Download
