KT315 PDF – Silicon NPN Transistor ( TO-92 )

Part Number: KT315

Function: Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: ETC


KT315 pdf transistor


KT315 is Silicon epitaxial-planar bipolar NPN transistor. Designed for use in low-frequency devices of the equipment of wide application.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

Characteristics of NPN Transistors:

1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.



KT315 datasheet

Are intended for use in low-frequency devices of the equipment of wide application. Foreign prototype • prototype 2SC544…2SC546 Number of specifications • ZhKZ.365.200 TU / 02 Features • Operating temperature range from -45 to + 100°C Housing design • plastic case KT-26 (TO-92) Pin assignment Conclusion No. 1 No. 2 No. 3 Purpose Base Collector Emitter KT315 (May 2012, edition 1.1) 1 Free Datasheet http:// Table 1. Main electrical parameters of KT315 at Tacr. environment = 25 °С Measuring modes UKB = 10 V, IE = 0 UEB = 6 V UKB = 10 V, IE = 1 mA V V pF MHz ps IK = 20 mA, IB = 2.0 mA IK = 20 mA, IB 250 300…1000 20 Parameters Collector reverse current Emitter reverse current Static current transfer coefficient Saturation voltage collector – emitter Saturation voltage base – emitter Collector junction capacitance

KT315 pdf


KT315 PDF Datasheet