MDF7N60B PDF – 600V, 7A, N-Channel MOSFET

Part Number: MDF7N60B

Function: 600V, 7A, N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: MagnaChip

Images:MDF7N60B pinout datasheet


These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.


VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range – Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD EAR dv/dt EAS TJ, Tstg o o MDP7N60B 600 660 ±30 7.0 4.4 28 131 1.05 13.1 4.5 220 MDF7N60B Unit V V V ID 7.0- 4.4- 28- 42 0.33 A A A W W/ oC mJ V/ns mJ o -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case(1) (1) Symbol RθJA RθJC MDP7N60B 62.5 0.95 MDF7N60B 62.5 3.01 Unit o C/W June. 2010 Version 1.3 1 MagnaChip Semiconductor Ltd. Free Datasheet http:// MDP7N60B / MDF7N60B N-channel MOSFET 600V Ordering Information Part Number MDP7N60BTH MDF7N60BTH Temp. Range -55~150 C -55~150 C o o Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free


MDF7N60B pdf

MDF7N60B Datasheet