Part Number: SGS5N150UF
Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )
Package: TO-220F
Manufacturer: Fairchild Semiconductor , Onsemi.com
Image and Pinouts:
Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A
• High Input Impedance
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1500 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 10 A (Tc = 25°C)
4. Maximum Power dissipation : Pc = 50 W (Ta = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Application:
1. Switching Power Supply
2.High Input Voltage Off-line Converter
Other data sheets are available within the file: SGS5N150, SGS5N150UFTU
SGS5N150UF Datasheet PDF
