SGS5N150UF Datasheet PDF – 1500V, 10A, IGBT – Fairchild

Part Number: SGS5N150UF

Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )

Package: TO-220F

Manufacturer: Fairchild Semiconductor , Onsemi.com

Image and Pinouts:
SGS5N150UF datasheet

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.

 

Features

• High Speed Switching

• Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A

• High Input Impedance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1500 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 10 A (Tc = 25°C)

4. Maximum Power dissipation : Pc = 50 W (Ta = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Application:

1. Switching Power Supply

2.High Input Voltage Off-line Converter

 

Other data sheets are available within the file: SGS5N150, SGS5N150UFTU

 

SGS5N150UF Datasheet PDF

SGS5N150UF pdf