Part Number: BAT54CW

Function: 30V, 200mA, SCHOTTKY BARRIER DIODE

Package: SOT-323 Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

 

Description

This is Schottky barrier diode.

 

Features

1. Low Forward Voltage Drop

2. Fast Switching

3. Ultra-Small Surface Mount Package

4. PN Junction Guard Ring for Transient and ESD Protection

 

Mechanical Data :

1. Case : SOT323

2. Case Material: Molded Plastic, “Green” Molding Compound

3. Moisture Sensitivity: Level 1 per J-STD-020

4. Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating)

5. Weight: 0.006 grams (approximate)

 

Applications:

1. SMPS
2. DC-DC Converter
3. Freewheeling Diodes
4. Reverse Polarity Protection
5. Blocking Diodes

 

Other data sheets are available within the file: BAT54, BAT54AW, BAT54SW, BAT54W

 

BAT54CW Datasheet PDF Download

Part Number: RD2004LN

Function: 400V, 20A, Switching Diode, Rectifier

Package: TO-220FI Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

The RD2004LN is 400V, 20A, Switching Diode.

One important characteristic of a switching diode is its forward voltage drop, which is the amount of voltage required to turn the diode on and allow current to flow through it. This voltage drop is typically much lower than that of a standard rectifier diode, which makes switching diodes more efficient for digital applications.

Another important feature of switching diodes is their switching speed, which is the time it takes for the diode to change from its on state to its off state and vice versa. Switching diodes are designed to have fast switching speeds to enable rapid changes in voltage or current.

Features

1. High breakdown voltage( Vrrm = 400V)

2. High reliability

3. One-point fixing type plastic molded package facilitatting easy mounting and heat dissipation.

4. Fast forward / reverse recovery time.

 

Absolute Maximum Ratings at Ta=25°C

1. Repetitive Peak Reverse Voltage : VRRM = 400 V

2. Nonrepetitive Peak Reverse Surge Voltage : VRSM = 400 V

3. Average Output Current : Io =20 A

4. Surge Forward Current : IFSM (Sine wave, 10ms single pulse) = 180 A

Applications:

1. Ultrahigh-Speed Switching Diode

2. Diffused Junction Silicon Diode

Other data sheets are available within the file: RD2004

RD2004LN Datasheet PDF Download