Part Number: SGB02N120

Marking : GB02N120

Function: 1200V, Fast IGBT in NPT-technology

Package: PG-TO-263-3-2 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

 

Description

This is Fast IGBT in NPT-technology.

Features

1. Lower Eoffcompared to previous generation

2. Short circuit withstand time – 10 µs

3. Designed for :  Motor controls, Inverter, SMPS

4. NPT-Technology offers:

(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behaviour
(3) Parallel switching capability

5. Qualified according to JEDEC for target applications

6. Pb-free lead plating; RoHS compliant

7. Complete product spectrum and PSpice Models

 

Type          Vce      Ic    Eoff       Tj           Marking           Package
SGB02N120 1200V  2A 0.11mJ  150°C    GB02N120     PG-TO-263-3-2

 

 

 

SGB02N120 Datasheet PDF Download

Other data sheets are available within the file: GB02N120, SGB-02N120

Part Number: RJP30H1DPP-M0

Function: 360V, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image and Pinouts:

 

Description

This is 360V, Silicon N-Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching : tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage : VCE(sat)= 1.5 V typ.

4. Low leak current : ICES= 1 μA max.

5. Isolated package : TO-220FL

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 630 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 25 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High speed power switching

 

RJP30H1DPP-M0 Datasheet PDF Download

Other data sheets are available within the file: RJP30H1, RJP30H1DPP