memory

H9TP32A4GDBCPR Datasheet – 4GB eNAND (x8) Flash Memory

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Part Number: H9TP32A4GDBCPR, H9TP32A4GDBCPR-KGM

Function: 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32) / Flash Memory

Package: 162-ball FBGA – 11.5×13.0mm2, 1.0t, 0.5mm pitch

Manufacturer: Hynix Semiconductor

Images:

H9TP32A4GDBCPR datasheet memory

Description

The SK hynix e‐NAND is an embedded flash memory storage solution. The SK hynix e‐NAND was developed for universal low cost data storage and communication media. The SK hynix e‐NAND is fully compatible with MMC bus and host.
The SK hynix e‐NAND communications are made through an advanced 13‐pin bus, and it can be either 1‐bit, 4‐bit, or 8‐bit in width. The SK hynix e‐NAND operates in high‐speed mode at clock frequencies equal or higher than 20MHz as defined in the MMC JEDEC standard. The communication protocol is defined in this MMC JEDEC standard.
The SK hynix e‐NAND is designed to cover a wide area of applications such as smart phones, cameras, organizers, PDA, digital recorders, MP3 players, pagers, electronic toys, etc. Features are mainly high speed performance, low power consumption, low cost and high density.

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Ordering Information

H9TP32A4GDBCPR-KGM Ordering information

[ e-NAND ]

1. Packaged NAND flash memory with MultiMedia-Card interface
2. e-NAND system specification, compliant with V4.41
3. Full backward compatibility with previous e-NAND system specification
4. Bus mode
– High-speed eMMC protocol.
– Three different data bus widths : 1 bit, 4 bits,8 bits.
– Data transfer rate: up to 104Mbyte/s
– DDR mode supported

[ LPDDR2 S4B ]

1. Programmable RL (Read Latency) and WL (Write Latency)
2. Programmable burst length: 4, 8 and 16
3. Auto refresh and self refresh supported
4. All bank auto refresh and per bank auto refresh supported
5. Auto TCSR (Temperature Compensated Self Refresh)
6. PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask

Pinout

H9TP32A4GDBCPR pinout

 

H9TP32A4GDBCPR Datasheet

H27UBG8T2CTR Datasheet – 32Gb MLC NAND Flash – SK Hynix

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Part Number: H27UBG8T2CTR, H27UBG8T2CTR-BC

Function: 32Gb(4096M x 8bit) Legacy MLC NAND Flash Memory

Package: TSOP-48/SDP Type

Manufacturer: SK Hynix

Image :

H27UBG8T2CTR nand flash memory

Description

OPERATING RANG : 2.7 to 3.6V

The product part NO.H27UBG8T2CTR-BC is a single 3.3V 32Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 1,044 blocks. Each block consists of 256 programmable pages. Each page contains 8,832 bytes. The pages are subdivided into an 8,192 byte main data storage area with a spare 640 byte district. Page program operation can be performed in typical 1,500us, and a single block can be erased in typical 5ms

Pinout

H27UBG8T2CTR datasheet pinout
Features

1. Multi Level Cell(MLC) Technology

2. NAND Interface
– x8 bus width
– Multiplexed address/data
– Pin-out compatibility for all densities

3. Supply Voltage
– Vcc = 2.7 V ~ 3.6 V

4. Organization
– Page size : 8832 (8192+640spare)bytes
– Block size : 256 pages (2M+160K)bytes
– Plane size : 1024 + 22 blocks
– Device size : 2048 + 44 Blocks

5. Page Read Time
– Random Read Time(tR) : 60us / 80 us (Typ. / Max.)
– Sequential Access(tRC/tWC) : 16ns (Min.)

6. Write Time
– Page program : 1500us(Typ.)

7. Block Erase Time
– Block erase : 5ms (Typ.)

8. Multi-Plane Architecture
– Two independent planes architecture
– Parallel operations on both planes available, effectively halving program, read and erase time

 

H27UBG8T2CTR Datasheet PDF


 

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