Part Number: AM29LV001B

Function: 1 Megabit (128 K x 8-Bit),  Flash Memory

Package: TSOP, PLCC 32 Pin Type

Manufacturer: Advanced Micro Devices

Pinouts:

 

Description

The Am29LV001B is a 1 Mbit, 3.0 Volt-only Flash memory device organized as 131,072 bytes. The Am29LV001B has a boot sector architecture. The device is offered in 32-pin PLCC and 32-pin TSOP packages. The byte-wide (x8) data appears on DQ7–DQ0. All read, erase, and program operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers.

Features

1. Single power supply operation
(1) Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
(2) Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

2. Manufactured on 0.35 μm process technology
3. High performance
(1) Full voltage range: access times as fast as 55 ns
(2) Regulated voltage range: access times as fast as 45 ns

4. Ultra low power consumption (typical values at 5 MHz)
(1) 200 nA Automatic Sleep mode current
(2) 200 nA standby mode current
(3) 7 mA read current
(4) 15 mA program/erase current

Other data sheets are available within the file:

AM29LV001BB-45RECB, AM29LV001BB-45REE, AM29LV001BB-45REEB, AM29LV001BB-45REI

AM29LV001B Datasheet PDF Download

Part Number: AM28F010A

Function: 1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Package: PDIP, PLCC, TSOP 32 Pin type

Manufacturer: Advanced Micro Devices

Pinouts:

 

Description

The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010A is erased when shipped from the factory.

Features

1 .High performance
(1) Access times as fast as 70 ns
2. CMOS low power consumption
(1) 30 mA maximum active current
(2) 100 µA maximum standby current
(3) No data retention power consumption
3. Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
(1)  32-pin PDIP
(2) 32-pin PLCC
(3) 32-pin TSOP
4. 100,000 write/erase cycles minimum
5. Write and erase voltage 12.0 V ±5%
6. Latch-up protected to 100 mA from –1 V to VCC+1 V
7. Embedded Erase Electrical Bulk Chip Erase
(1)  5 seconds typical chip erase, including pre-programming
8. Embedded Program
(1) 14 µs typical byte program, including time-out
(2) 4 seconds typical chip program
9. Command register architecture for microprocessor/microcontroller compatible write interface
10. On-chip address and data latches
11. Advanced CMOS flash memory technology
(1) Low cost single transistor memory cell
12. Embedded algorithms for completely self-timed write/erase operations

Other data sheets are available within the file:

AM28F010A-120EC, AM28F010A-120ECB, AM28F010A-120EE, AM28F010A-120EEB

AM28F010A Datasheet PDF Download