MAR9264T70LS Datasheet – Radiation Hard 64K Static RAM

Part Number: MAR9264T70LS

Function: Radiation Hard 8192 x 8 bit static RAM

Package: DIP, SOP 28 Pin Type

Manufacturer: Dynex Semiconductor

Pinouts:

MAR9264T70LS datasheet

 

Description

The MA9264 64k Static RAM is configured as 8192×8 bits and manufactured using CMOS-SOS high performance, radiation hard,1.5µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.

Features

1. 1.5µm CMOS-SOS Technology
2. Latch-up Free
3. Fast Access Time 70ns Typical
4. Single 5V Supply
5. Three State Output
6. Low Standby Current 100µA Typical
7. -55°C to +125°C Operation
8. All Inputs and Outputs Fully TTL or CMOS Compatible
9. Fully Static Operation

Other data sheets are available within the file: MAQ9264C70CB, MAQ9264C70CD, MAQ9264C70CE, MAQ9264C70CL, MAQ9264C70CS

MAR9264T70LS Datasheet PDF Download


MAR9264T70LS pdf

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W27E010-55 Datasheet PDF – 128K x 8 bits, Erasable EPROM

Part Number: W27E010-55

Function: 128K x 8 bits, High speed, Low power Electrically Erasable EPROM

Package: 32-pin DIP, SOP, PLCC

Manufacturer: Winbond

Pinouts:

W27E010-55 datasheet

 

Description

The W27E010-55 is a high speed, low power Electrically Erasable and Programmable Read Only Memeory organized as 131072 X 8 bits that operates on a single 5 volt power supply. The W27E010 provides an electrical chip erase function.

Features

1. High speed access time : 45/55/70/90/120 nS (max.)
2. Read operating current: 30 mA (typ.)
3. Erase/Programming operating current : 1 mA (typ.)
4. Standby current: 5 mA (typ.)
5. Single 5V power supply
6. Fully static operation
7. All inputs and outputs directly TTL/CMOS compatible
8. Three-state outputs

 

Other data sheets are available within the file: W27E010-12, W27E010-45, W27E010-70, W27E010P-12

W27E010-55 Datasheet PDF Download


W27E010-55 pdf