Part Number: MDD7N25

Function: 250V, 6.2A, N-Channel MOSFET

Package: D-Pak ( TO-252 ) Type

Manufacturer: MagnaChip

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Description

This is 250V, N-channel MOSFET.

N-Channel MOSFET 250V, 6.2A, 0.55Ω, The MDDN25 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications.

Features

1. VDS = 250V

2. ID = 6.2A

3. RDS(ON) ≤ 0.55Ω

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 250 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 6.2 A

4. Power Dissipation : Pd = 56 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications:

1. Power Supply

2. PFC

3. LED TV @VGS = 10V D

MDD7N25 PDF Datasheet

Part Number: 18N20GH, AP18N20GH

Function: 200V, 18A, N-channel MOSFET

Package: TO-252(H), TO-251(J) Type

Manufacturer: Advanced Power Electronics

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Description

18N20GH series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GJ) are available for low-profile applications.

Features

1. Simple Drive Requirement

2. Low On-resistance

3. Fast Switching Characteristics

4. RoHS Compliant & Halogen-Free

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 18 A

4. Total Power Dissipation: Pd = 89 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

18N20GH PDF Datasheet