FDC6506P Datasheet – Dual P-Channel MOSFET

The FDC6506P is a P-channel PowerTrench MOSFET produced by Fairchild Semiconductor, which is now a part of ON Semiconductor. This MOSFET is designed for use in various power management applications due to its low on-resistance and high current-handling capabilities.

Function: Dual P-Channel Logic Level PowerTrench MOSFET

Package: SuperSOT-6 Type

Manufacturer: ON Semiconductor

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FDC6506P datasheet pdf

Description

These P-Channel logic level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1. Drain-Source Voltage (VDS): Typically around -30V (negative voltage, indicating it’s a P-channel MOSFET). This is the maximum voltage that can be applied between the drain and source terminals.

2. Gate-Source Voltage (VGS): Typically around ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.

Features

• -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V

• Low gate charge (2.3nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

 

Pinouts

FDC6506P pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = – 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = -1.8 A

4. Drain power dissipation : PD = 0.96 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. Load switch

2. Battery protection

3. Power management

FDC6506P Datasheet PDF

S2N7002DW Datasheet – 115mA, 60V, Dual N-Ch MOSFET

Part Number: S2N7002DW

Device Marking: 702

Function: 115mA, 60V, Dual N-Channel MOSFET

Package: SOT-363 Type

Manufacturer:  SeCoS Corporation

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S2N7002DW datasheet pdf

Description

The S2N7002DW is a dual N-channel MOSFET designed for low-power switching applications.

1. Drain-Source Voltage (VDS): Typically 60V (Volts). This is the maximum voltage that can be applied between the drain and source terminals.

2. Gate-Source Voltage (VGS): Typically ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.

3. Continuous Drain Current (ID): Typically 115mA (Milliamperes) per channel. This is the maximum continuous current that each MOSFET channel can handle flowing from the drain to the source.

Power Dissipation (PD): The power dissipation is not explicitly provided in your description. It typically depends on the package and thermal characteristics of the MOSFET.

Features

1. Molded Plastic.

2. Case Material-UL Flammability Rating 94V-0

3. Terminals: Solderable per MIL-STD-202, Method 208

4. Weight: 0.006 grams(approx.)

Pinouts

S2N7002DW pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 115 mA

4. Drain power dissipation : PD = 380 mW

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. Level shifting, small signal amplification, LED driving

2. Load switching in battery-powered devices and low-voltage circuits.

S2N7002DW Datasheet PDF