2SK1414 MOSFET – 1500V, 6A, Transistor ( Datasheet PDF )

Part Number: 2SK1414

Function: N-channel MOSFET ( 1500V, 6A )

Package: TO-3PBL Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SK1414 datasheet

 

Description

This is 1500V, N-Channel Silicon MOSFET.

Features

1. Low ON resistance, low input capacitance, Ultrahigh-speed switching.

2. High reliability (Adoption of HVP process).

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 1500 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 6 A

4. Allowable Power Dissipation: Pd = 3.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High-voltage, high-speed switching application

 

 

2SK1414 Datasheet PDF Download


2SK1414 pdf

Other data sheets are available within the file: K1414

2SK3435-Z MOSFET – 60V, 80A, Transistor ( Datasheet PDF )

Part Number: 2SK3435-Z

Function: N-channel, Single Power MOSFET (60V, 80A)

Package: TO-220SMD Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

2SK3435-Z datasheet

 

Description

The 2SK3435-Z is N-channel MOS Field Effect Transistor  designed for high current switching applications. This is Automotive Power MOSFET.

Features

1. Super low on-state resistance
(1) RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A)
(2) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)

2. Low Ciss: Ciss = 3200 pF TYP.
3. Built-in gate protection diode

 

Equivalent Circuit :

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 80 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

2SK3435-Z Datasheet PDF Download


2SK3435-Z pdf

Other data sheets are available within the file: 2SK3435, 2SK3435-S, K3435-Z, 2SK3435-ZJ, K3435