NPN archives - Page 172 of 1048

Features

1. With TO-220C package

2. High breakdown voltage : VCBO=800V(Min)

3. Fast switching speed.

4. Wide area of safe operation

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 800 V

2. Collector to Emitter Voltage: Vceo = 500 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 1.75 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Switching Regulator

Part Number: BUV50

Function: 250V, 25A, HIGH POWER NPN SILICON TRANSISTOR

Package: TO-3 Type

Image and Pinouts:

BUV50 datasheet

Description

The BUV50 is a Multiepitaxial planar NPN transistor in TO-3 metal case.

It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.

1. High Current Capability

2. Low Collector Saturation Voltage : VCE(sat)= 0.8V (Max.) @IC= 10A

3. High Switching Speed

4. Minimum Lot-to-Lot variations for robust device performance and reliable operatio

Absolute maximum ratings ( Ta=25°C )

0. Collector to Base Voltage: Vcbo = 250 V

1. Collector to Emitter Voltage: Vceo = 125 V

2. Emitter to Base Voltage: Vebo = 7 V

3. Collector Current: Ic = 25 A

4. Total Power Dissipation : Ptot = 150 W

5. Junction Temperature: Tj = 150°C

6. Storage Temperature: Tsg = -65 ~ +200°C

Other data sheets are available within the file: BUV-50