NPN archives - Page 235 of 1048

Features

1. With TO-3PH package

2. High voltage ,high speed

3. Low collector saturation voltage

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 80 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Designed for use in TV and CRT display horizontal output

This is one of the transistor types.

Part Number: C1971, 2SC1971

Function:

Package: TO-220 Pin type

Manufacturer: Mitsubishi

Image

Description

The C1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifer on VHF band mobile radio applications.

Features

1. High power gain : Gpe >= 10dB

2. Emitter ballasted contruction, gold metallization for high reliability and good performances

3. Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 15.2V, Po=6W, f = 175Mhz

Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 2 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. 4 to 5 watts output power amplifiers in VHF band applications

NPN