Part Number: BUL1203EFP

Function: 550V, 5A, HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Package: TO-220FP Type

Manufacturer: STMicroelectronics

Image and Pinouts:

Description

This is 550V, 5A, NPN Transistor. The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance switching speeds and tight hFE range while
maintaining a wide RBSOA.

 

Features

1. HIGH VOLTAGE CAPABILITY

2. LOW SPREAD OF DYNAMIC PARAMETERS

3. MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

4. VERY HIGH SWITCHING SPEED

5. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1200 V
2. Collector to Emitter Voltage: Vceo = 550 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 5 A
5. Total Dissipation : Ptot = 36 W ( Tc=25°C )
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file: BUL1203EF, BUL1203E, BUL1203

 

BUL1203EFP Datasheet PDF Download

Part Number: C5801

Function: 5.5V, 100mA, NPN SILICON RF TRANSISTOR

Package: Lead-less minimold 3-pin Type

Manufacturer: California Eastern Laboratories.

Image and Pinouts:

 

Description

THIS IS 5.5V, 100mA, NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE.

Features

1. Low phase distortion, low voltage operation

2. Ideal for OSC applications

3. 3-pin lead-less minimold package

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 9 V

2. Collector to Emitter Voltage: Vceo = 5.5 V

3. Emitter to Base Voltage: Vebo = 1.5 V

4. Collector Current: Ic = 100 mA

5. Total Dissipation : Ptot = 140 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file:

2SC5801, 2SC5801-A, 2SC5801-T3-A, 851M13, NE851M13

 

C5801 Datasheet PDF Download