Part Number: 2SD389

Function: 4A, 60V, NPN Transistor

Package: TO-220 Type

Manufacturer: Wing Shing International Group

Image and Pinouts:

 

Description

This is 4A, 60V, NPN Epitaxial Silicon Transistor.

Features

1. Low Frequency Power Amplifier

2. Complement to 2SB507

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Base Voltage : VCBO = 60 V

2. Collector-Emitter Voltage : VCEO = 60 V

3. Emitter-Base voltage : VEBO = 7 V

4. Collector Current (DC) : IC = 4 A

5. Collector Dissipation (Tc=25℃) : Pc = 30 W

6. Junction temperature : Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: D389

2SD389 Datasheet PDF

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This is one of the transistor types.

Part Number: C3150

Function: Vcbo=900V, Vceo=800V, 3A, Silicon NPN Power Transistor

Package: TO-220C Type

Manufacturer: SavantIC Semiconductor

See the preview image and the PDF file for more information.

Image

 

Description

This is 800V, 3A, NPN Power Transistor.

Features

1. High breakdown voltage : VCBO=900V(Min)

2. Fast switching speed.

3. Wide ASO (Safe Operating Area)

 

Absolute maximum ratings

1. Collector-base voltage ( Open emitter) : VCBO = 900 V
2. Collector-emitter voltage ( Open base ) : VCEO = 800 V
3. Emitter-base voltage ( Open collector ) VEBO = 7 V
4. Collector current : IC =3 A
5. Collector current-peak : ICM =10 A
6. Base current : IB= 1.5 A
7. Collector dissipation TC=25’C : PC= 50 W

C3150 Pinouts :
  1. Base 2. Collector, 3. Emitter

Applications:

1. 800V, 3A switching regulator applications

Other data sheets are available within the file: 2SC3150

 

C3150 Datasheet PDF Download

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