MMBTA14LT1 Datasheet PDF – 30V, NPN Transistor

Part Number: MMBTA14LT1

Function: Darlington Amplifier, NPN Silicon Transistor

Package: SOT-23 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

MMBTA14LT1 datasheet

 

Description

This is Darlington Amplifier Transistor.

 

Features

1. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

2. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 300 mA

5. Collector Dissipation : Pc = 225 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

MMBTA14LT1 Datasheet PDF Download


MMBTA14LT1 pdf

Other data sheets are available within the file:

MMBTA13LT1, MMBTA13LT1G, MMBTA13LT3, MMBTA14LT, MMBTA14LT1G

2SC4520 Transistor – 45V, 1.5A, NPN ( Datasheet PDF )

Part Number: 2SC4520

Function: 45V, 1.5A, NPN Transistor

Package: PCP Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SC4520 datasheet

 

Description

This is a NPN Epitaxial Planar Silicon Transistor.

Feautures :

1. Adoption of FBET, MBIT processes

2. Large current capacity

3. Low collector-to-emitter saturation voltage

4. Fast switching speed

5. Small-sized package.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 1.3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-Speed Switching

 

2SC4520 Datasheet PDF Download


2SC4520 pdf

Other data sheets are available within the file: C4520