PZT2222A Datasheet PDF – 40V, NPN Transistor

Part Number: PZT2222A

Function: NPN Silicon Planar Epitaxial Transistor

Package: SOT-223 ( TO-261 ) Type

Manufacturer: ON Semiconductor

Pinouts:

PZT2222A datasheet

 

Description

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount
applications.

Features

• PNP Complement is PZT2907AT1

• The SOT−223 Package Can be Soldered Using Wave or Reflow

• SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 75 V

2. Collector to Emitter Voltage: Vceo = 40 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 600 mA

5. Total Collector Dissipation: Pd = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

PZT2222A Datasheet PDF Download


PZT2222A pdf

Other data sheets are available within the file:

PZT2222, PZT2222AT1G, PZT2222AT3G, SPZT2222AT1G

2SC1775A Transistor – 120V, 50mA, NPN ( Datasheet PDF )

Part Number: 2SC1775A

Function: 120V, 50mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SC1775A datasheet

 

Description

This is 120V, 50mA, Silicon NPN Epitaxial Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 120 V

2. Collector to Emitter Voltage: Vceo = 120 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 300 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low frequency low noise amplifier

2. Complementary pair with 2SA872/A

 

2SC1775A Datasheet PDF Download


2SC1775A pdf

Other data sheets are available within the file: 2SC1775, C1775A