Part Number: C829, 2SC829

Function: 20V, 30mA, Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: Panasonic

Images:

1:Emitter 2:Collector 3:Base

Description

2SC829, C829 is Silicon NPN epitaxial planer type Transistor. For high-frequency amplification.

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

Features

1. Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 30 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C829 PDF Datasheet

Part Number: C4429, 2SC4429

Function: 800V, 8A, NPN Transistor

Package: TO-3PML Type

Manufacturer: Sanyo Semicon Device

Image and pinouts :

 

Description

C4429 is 800V, 8A, NPN Triple Diffused Planar Silicon Transistor.

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Features

1. High breakdown voltage, high reliability.

2. Fast switching speed (tf : 0.1µs typ).

3. Wide ASO.

4. Adoption of MBIT process.

5. Micaless package facilitating easy mounting.

Pinouts:

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 8 A

5. Collector Dissipation : Pc = 3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C4429 PDF Datasheet