BU5027AF PDF Datasheet – 800V, 2.7A, NPN Transistor

Part Number: BU5027AF

Function: 800V, 2.7A, Bipolar Junction NPN Transistor

Package: TO-220F Type

Manufacturer: ShenZhen Jingdao Electronic

Images:BU5027AF pdf pinout

Description

BU5027AF is 800V, 2.7A, NPN Transistor.

 

Features

1. High voltage capability

2. Features of good high temperature

3. High switching speed

Package:  TO-220F

BU5027AF datasheet transistor

Applications:

1. Computer aided power and Switch-mode power supplies

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 2.7 A

5. Power Dissipation : Pc = 1.8 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

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BU5027AF PDF Datasheet

D1651 Transistor – 800V, 5A, NPN, Equivalent, 2SD1651 ( PDF )

Part Number: D1651, 2SD1651

Function: 800V, 5A, Silicon NPN Transistor

Package: TO-3PML Type

Manufacturer: Wing Shing Computer Components

Images:D1651 pdf pinout

 

Description

D1651 is 800V, 5A, Silicon NPN Power Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

:

Features

1. High Breakdown Voltage- : VCBO= 1500V (Min)

2. High Switching Speed ·High Reliability

3. Built-in Damper Diode

4. Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

Applications:

1. Designed for color TV horizontal deflection output applicaitions

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 60 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

D1651 PDF Datasheet