Part Number: D669, 2SD669

Function: 120V, 1.5A, NPN Transistor

Package: TO-126 MOD Type

Manufacturer: Hitachi Semiconductor

Images:

Description

D669 is 120V, 1.5A, Silicon NPN Epitaxial Transistor.

Characteristics:

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 180 V

2. Collector to Emitter Voltage: Vceo = 120 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 V

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application:

1. Low frequency power amplifier complementary pair with 2SB649/A

 

D669 PDF Datasheet

Part Number: D5032, 3DD5032

Function: 1500V, 8A, NPN Transistor

Package: TO-3P(H)IS Type

Manufacturer: Jilin sino microeletronics

Images:

Description

D5032 is an NPN bipolar high back pressure high-power transistor. The main process technologies used in manufacturing are: high-voltage mesa technology, triple diffusion technology, etc. It adopts a plastic fully encapsulated structure.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 8 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Low-frequency amplification shell rated bipolar transistor

2. Horizontal deflection output for color TV

D5032 PDF Datasheet