This post explains for the MOSFET.

The Part Number is K2837, 2SK2837.

The function of this semiconductor is 500V, 20A, N-Channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

Pinout: 1. Gate 2. Drain ( Heat Sink ) 3. Source

Description

The K2837 is 500V, 20A,Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 17 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) […]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain Power Dissipation: Pd = 150 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Chopper Regulator

2. DC−DC Converter and Motor Drive

 

K2837 PDF Datasheet

This post explains for the MOSFET.

The Part Number is FU9024N, IRFU9024N.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-252AA, TO-251AA Type

Manufacturer: International Rectifier

Image:

Pinout : 1. Gate 2. Drain 3. Source 4. Drain

 

Description

The FU9024N is -55V, -11A, P-Channel HEXFET Power MOSFET. A P-channel HEXFET Power MOSFET is a type of power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-performance switching and amplification of electrical signals. The “P-channel” designation indicates that it is a type of MOSFET with a P-channel enhancement mode, which means it conducts current when a negative voltage is applied to its gate terminal.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

1.HEXFET Technology: HEXFET stands for “Hexagonal Flat Package Enhancement-Mode MOSFET.” It’s a trademarked technology developed by International Rectifier (now part of Infineon Technologies) that is known for providing high-performance characteristics, including low on-resistance (RDS(on)) and fast switching speeds.

Pinout

Features

1. Ultra Low On-Resistance

2. P-Channel

3. Surface Mount (IRFR9024N)

4. Straight Lead (IRFU9024N)

5. Advanced Process Technology

6. Fast Switching

7. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 11 A (Tc = 25°C)

4. Power Dissipation: Pd = 38 W  (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FU9024N PDF Datasheet