This post explains for the MOSFET.

The Part Number is P3NK60ZFP, STP3NK60ZFP.

The function of this semiconductor is 600V, 2.4A, N-Channel MOSFET.

The package is D²PAK, IPAK, DPAK, TO-220 and TO-220FP.

Manufacturer: STMicroelectronics

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Description

P3NK60ZFP is N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH Power MOSFET.

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH.

In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

1. Extremely high dv/dt capability

2. 100% avalanche tested

3. Gate charge minimized

4. Very low intrinsic capacitance

5. Zener-protected

Applications

1. Switching applications

2. electronic switches in many applications due to their ability to handle relatively high currents and voltages

Other data sheets are available within the file:

STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4, STP3NK60Z, STP3NK60ZFP

P3NK60ZFP PDF Datasheet

This post explains for the MOSFET.

The Part Number is K4097, 2SK4097.

The function of this transistor is N-Channel MOSFET.

The package is TO-220FI(LS) Type

Manufacturer: Sanyo Semicon Device

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Description

The K4097 is 500V, 9.5A, N-Channel Silicon MOSFET.

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.

• Adoption of high reliability HVP process.

• Attachment workability is good by Mica-less package.

• Avalanche resistance guarantee.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9.5 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. General-Purpose Switching Device

K4097 PDF Datasheet