This is one of the NPN transistor types.

Part Number: KSC2073, 2SC2073

Function: NPN Epitaxial Silicon Transistor

Package: TO-220 Type

The manufacturers of this product is fairchild semiconductor.

See the preview image and the PDF file for more information.

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Description

This is NPN silicon power transistor, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc.

The C2073 transistor is designed for use in general purpose Power amplifier, vertical output application.

• NPN epitaxial silicon transistor
• Optimized for vertical deflection output
• Good linearity for analog waveform amplification
• Moderate power dissipation capability

Features

1. Collector-Emitter Voltage Vceo = 150V (Min)

2. DC Current Gain : hFE = 40-140 @Ic = 500mA

3. Complementary PNP 2SA940

4. TV Vertical Deflection Output

C2073 transistor Pinout

1. Base
2. Collector
3. Emitter
4. Collector ( Case )

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 150 V

2. Collector to Emitter Voltage: Vceo = 150 V

3. Emitter to Base Voltage: Vebo = 5.0 V

4. Collector Current: Ic = 1.5 A

5. Total Dissipation : Pc = 25 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

• CRT TV vertical deflection output stage
• CRT monitor vertical amplifier
• General-purpose medium-power linear amplification
• Inductive load driver circuits

Alternative / Equivalent Devices

• 2SC2073 (standard designation)
• TIP41C (general-purpose alternative)
• BD139 (lower power alternative)
• D880 (similar class)
• KSC2073 (modern equivalent naming)

C2073 Transistor Datasheet

2SC2073 Similar features and reference parts

The 3DD1555 is a high-voltage NPN bipolar power transistor specifically engineered for horizontal deflection output (H.O.T) stages in CRT displays such as color TVs and monitors. It is optimized for high-voltage switching, fast fall time, and rugged avalanche capability.

Part Number: 3DD1555

Function: Silicon NPN Bipolar Transistor

Package: TO-3P(H)IS Type

Manufacturer: Jilin Sino-Microelectronics

See the preview image and the PDF file for more information.

Pinouts:

Description

D1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

Absolute maximum ratings ( Tc=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 5 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Key Design Insights

• High Voltage Margin: 1500V V_CBO is critical for flyback spikes
• Switching Speed: Fast fall time reduces switching loss and heating
• Avalanche Ruggedness: Must absorb inductive energy safely
• Thermal Management: Requires proper heatsinking in operation
• Base Drive: Requires strong base drive for fast saturation and turn-off

Design Considerations

• Use proper snubber (RC or RCD clamp) to limit overvoltage
• Ensure fast base discharge (to avoid storage time issues)
• Avoid secondary breakdown by respecting SOA (Safe Operating Area)
• Layout must minimize parasitic inductance
• Thermal coupling to heatsink is mandatory for reliability

Alternative / Equivalent Devices

• 2SC5296
• BU508A / BU508DF
• D1555 series variants
• J6810 (similar application class)
• 2SD1555

Applications

• CRT color TV horizontal deflection output stage
• CRT monitor deflection circuits
• High-voltage pulse switching applications

Other data sheets are available within the file: 3DD1555, 3DD1555-O-A-N-D

D1555 Datasheet PDF Download