Part Number: HY1606AP

Function: 60V, 60A, N-Channel Enhancement Mode MOSFET

Package: TO-220 Type

Manufacturer: HOOYI Semicondcutor

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Description

The HY1606AP is 60V, 60A, N-Channel Enhancement Mode MOSFET. 

Features

1. 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V

2. Avalanche Rated

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 65 A

4. Total Power Dissipation: Pd = 130 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

• Power Management for Inverter Systems.

HY1606AP PDF Datasheet

Part Number: APM4010N

Function: 40V, 57A, N-Channel MOSFET

Package: TO-252 Type

Manufacturer: ANPEC

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Description

The APM4010N is 40V, 57A, N-Channel Enhancement Mode MOSFET. 

Features

1. 40V/57A,

(1) RDS(ON)=8.2mW (typ.) @VGS=10V

(2) RDS(ON)=13mW (typ.) @VGS=5V

2. Super HighDense CellDesign

3. Reliable and Rugged

4. Lead Free andGreenDevicesAvailable (RoHS Compliant)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 40 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 57 A

4. Maximum Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power Management in LCD monitor/TV inverter

 

APM4010N PDF Datasheet