Part Number: D5032, 3DD5032

Function: 1500V, 8A, NPN Transistor

Package: TO-3P(H)IS Type

Manufacturer: Jilin sino microeletronics

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Description

D5032 is an NPN bipolar high back pressure high-power transistor. The main process technologies used in manufacturing are: high-voltage mesa technology, triple diffusion technology, etc. It adopts a plastic fully encapsulated structure.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 8 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Low-frequency amplification shell rated bipolar transistor

2. Horizontal deflection output for color TV

D5032 PDF Datasheet

Part Number: SBT42F

Marking : M1A

Function: 300V, 500mA, NPN Silicon Transistor

Package: SOT-23F Type

Manufacturer: AUK corp

Images:

Description

SBT42F is NPN Silicon Transistor. 

Characteristics:

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

 

Features

• Collector-Emitter voltage VCEO=SBT42F : 300V

• Complementary pair with SBT92F

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 300 V

2. Collector to Emitter Voltage: Vceo = 300 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 500 mA

5. Collector Dissipation : Pc = 350 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

• High voltage application

• Telephone application

SBT42F PDF Datasheet