Part Number: SBT42F
Marking : M1A
Function: 300V, 500mA, NPN Silicon Transistor
Package: SOT-23F Type
Manufacturer: AUK corp
Images:
Description
SBT42F is NPN Silicon Transistor.
Characteristics:
1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.
2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.
3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.
Features
• Collector-Emitter voltage VCEO=SBT42F : 300V
• Complementary pair with SBT92F
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 300 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 500 mA
5. Collector Dissipation : Pc = 350 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
• High voltage application
• Telephone application
SBT42F PDF Datasheet
