FTP08N06A PDF Datasheet – 55V, 120A, MOSFET

This post explains for the MOSFET.

The Part Number is FTP08N06A.

The function of this transistor is 55V, 120A, N-Channel MOSFET.

The Package is TO-220 Type.

Manufacturer: IPS (InPower Semiconductor)

Images:

FTP08N06A mosfet datasheet

Description

The FTP08N06A is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The FTP08N06A has a maximum drain-source voltage of 55V and a maximum drain current of 120A, making it suitable for high voltage, high current applications.

Features

• RoHS Compliant

• Low ON Resistance

• Low Gate Charge

• Peak Current vs Pulse Width C

Pinout:

FTP08N06A pinout transistor

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 120 A

4. Drain power dissipation : PD = 230 W

5. Single pulse avalanche energy : Eas = 760 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

Applications:

• Automotive

• DC Motor Control

• Class D Amplifier

• Uninterruptible Power Supply (UPS)

FTP08N06A PDF Datasheet

C4977 PDF – 400V, 7A, NPN, 2SC4977, Transistor

Part Number: C4977, 2SC4977

Function: 400V, 7A, NPN Transistor

Package: TO-220F Type

Manufacturer: INCHANGE Semiconductor

Images:C4977 pdf pinout

Description

C4977 is 400V, 7A, Silicon NPN Power Transistor.

Features:

1. Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min)

2. Fast Switching Speed

3. Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A

 

C4977 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 450 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 8 V

4. Collector Current: Ic = 7 A

5. Collector Dissipation : Pc = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.

 

C4977 PDF Datasheet