Part Number: TIP3055

Function: 60V, 15A, Complementary Silicon Power Transistor

Package: TO-218, TO-247 Type

Manufacturer: ON Semiconductor

Image

Description

This is 60V, 15A, Complementary Silicon Power NPN Transistor.

 

Features

1. DC Current Gain – hFE = 20-70 @ IC = 4.0 Adc

2. Collector−Emitter Saturation Voltage – VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc

3. Excellent Safe Operating Area

4. These are Pb−Free Devices*

 

Pinout:

Maximum Ratings :

1. Collector-Emitter Voltage : VCEO = 60 Vdc

2. Collector-Emitter Voltage : VCER = 70 Vdc

3. Collector-Base Voltage : VCB = 100 Vdc

4. Emitter-Base Voltage : VEB = 7.0 Vdc

5. Collector Current-Continuous : IC = 15 Adc
6. Base Current : IB = 7.0 Adc

7. Total Power Dissipation @ TC = 25°C : PD = 90 W

Applications:

1. general−purpose switching and amplifier

 

Other data sheets are available within the file: TIP2955, TIP2955G, TIP3055G

TIP3055 Datasheet PDF Download

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Part Number: BC847BS

Marking : 1F*

Function: 45V, 100mA, NPN / NPN General-purpose Transistor

Package: SOT-363 Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

 

Description

This is 45V, 100mA, NPN / NPN general-purpose transistor pair in a very small SOT363 (SC-88),
Surface-Mounted Device (SMD) plastic package.

Features

1. Low collector capacitance

2. Low collector-emitter saturation voltage

3. Closely matched current gain

4. Reduces number of components and board space

5. No mutual interference between the transistors

6. PNP / PNP complement : BC857BS.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Ptot = 220 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file: BC847B

BC847BS Datasheet PDF Download