Transistor

G10N60A Datasheet PDF – 600V, 10A, IGBT – Infineon

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Part Number: G10N60A, SGB10N60A

Function: 600V, 10A, Fast IGBT in NPT-technology

Package: PG-TO-263-3-2 Type

Manufacturer: Infineon

Image

G10N60A image

Description

This is 600V, 10A, IGBT. The IGBT is insulated-gate bipolar transistor.

 

Features

1. 75% lower Eoffcompared to previous generation combined with low conduction losses

2. Short circuit withstand time – 10 µs

3. Designed for :
(1) Motor controls
(2) Inverter

4. NPT-Technology for 600V applications offers:
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behaviour
(3) Parallel switching capability

5. Qualified according to JEDEC for target applications

6. Pb-free lead plating; RoHS compliant

Pinout:

G10N60A datasheet

G10N60A Datasheet PDF Download

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C4204 Datasheet PDF- Vcbo=30V, NPN Transistor – Sanyo

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Part Number: C4204

Function: 25V, 0.7A, NPN Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:
C4204 datasheet

Description

The C4204 is 25V, 0.7A, NPN Epitaxial Planar Silicon Transistor.

Features

1. Adoption of MBIT process.
2. High DC current gain (hFE=800 to 3200).
3. Large current capacity (IC=0.7A).
4. Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
5. High VEBO(VEBO≥15V)

Applications

1. AF amplifier, various drivers

 

Absolute Maximum Ratings

1. Collector-to-Base Voltage: VCBO = 30 V
2. Collector-to-Emitter Voltage: VCEO = 25 V
3. Emitter-to-Base Voltage: VEBO = 15 V
4. Collector Current: IC = 0.7 A
5. Collector Current (Pulse): ICP = 1.5 A
6. Collector Dissipation: PC = 0.6 W

Test Circuit:

circuit

Other data sheets are available within the file: 2SC4204

C4204 Datasheet PDF Download

C4204 pdf