Part Number: TSF8N60M
Function: 600V, 7.5A, N-Channel MOSFET
Package: TO-220, TO-220F Type
Manufacturer: Truesemi
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Description
TSF8N60M is 600V, 7.5A, N-Channel MOSFET.
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
1. 7.5A, 600V, RDS(on)=1.2Ω@VGS=10V
2. Gate charge (Typical 30nC)
3. High ruggedness
4. Fast switching
5. 100% AvalancheTested
6. Improved dv/dt capability
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.5 A
4. Total Power Dissipation: Pd = 55 W
5. Avalanche energy: Ear = 15.5 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
TSF8N60M PDF Datasheet
