11N06LT – PHB11N06LT – 55V, 11A, MOSFET

Part Number: 11N06LT, PHB11N06LT

Function: 55V, 11A, MOSFET

Package: SOT-428, SOT404 Type

Manufacturer: NXP Semiconductor, Philips Semiconductor


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11N06LT image

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This is N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surface mounting package. The PHD11N06LT is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source Description SOT428 tab SOT404 tab 2 2 3 drain 1 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. – 55 MAX. 55 55 ± 13 11 7.6 44 36 175 UNIT V V V A A A W ˚C 1 It is not possible to make contact to pin 2 of the SOT404 or SOT428 package September 1998 1 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET ESD LIMITING VALUE SYMBOL PARAMETER VC PHB11N06LT, PHD11N06LT CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. – MAX. 2 UNIT kV Electrostatic discharge capacitor voltage, all pins THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. SOT78 package, in free air SOT428 and SOT404 package, pcb mounted, minimum footprint 60 50 MAX. 4.17 UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS V(BR)GSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; IG = ±1 mA; VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VGS = 10 V; ID = 5.5 A VGS = 5 V; ID = 5.5 A Tj = 175˚C Forward transconductance VDS = 25 V; ID = 5.5 A Gate source leakage current VGS = ±5 V; VDS = 0 V Tj = 175˚C Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance VDS = 55 […]



• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


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11N06LT Datasheet