Part Number: 1803DFH, ST1803DFH
Function: 1500V, 10A, NPN Transistor
Package: TO-220FH Type
Manufacturer: ST Microelectronics
The 1803DFH is NPN Power Transistor.
A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NEW Fully Plastic TO-220 for HIGH VOLTAGE Applications s NEW SERIES, ENHANCED PERFORMANCE s INTEGRATED FREE WHEELING DIODE s HIGH VOLTAGE CAPABILITY ( > 1500 V ) s HIGH SWITCHING SPEED s TIGTHER hfe CONTROL s IMPROVED RUGGEDNESS s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING s CREEPAGE DISTANCE PATH > 4 mm s Applications: s HORIZONTAL DEFLECTION FOR COLOR TVS Description The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. TO-220FH INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ.
ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST1803DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.125 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain ts tf Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 ST1803DFH Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST1803DFH Power losses Switching Time Inductive Load Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. […]