SFR16S0 Datasheet – Axial Metal Film Resistor ( PDF )

Part Number: SFR16S0

Function: Standard Metal Film Leaded Resistor

Package: Axial Type

Manufacturer: Vishay Semiconductors

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SFR16S0 datasheet

Description

SFR16S0 is an axial leaded metal film resistor constructed using a homogeneous metal alloy film deposited on a high-grade ceramic substrate. The resistive value is precisely adjusted via a helical trimming process, and the component is encapsulated with a protective lacquer coating, ensuring excellent stability, low noise, and high reliability in various electronic applications.

Features

  • Metal film technology for high precision and stability
  • Compact size: 0204 package (SFR16S series)
  • Low noise performance (≤ 1.5 µV/V for R > 1 MΩ)
  • Excellent temperature stability
  • High reliability due to protective lacquer coating (light-blue)
  • Resistant to cleaning solvents (IEC 60068-2-45 compliant)
  • Compatible with both Pb-free and leaded soldering processes

Construction Details

  • Resistive element: deposited metal alloy film
  • Substrate: high-grade ceramic body
  • Trimming: helical groove for precise resistance adjustment
  • Leads: tinned electrolytic copper, welded to end caps
  • Coating: insulating lacquer for environmental protection

Electrical Characteristics (Typical)

  • Resistance range: typically from a few ohms up to several megaohms
  • Tolerance: commonly ±1%, ±2%, ±5% (depending on variant)
  • Temperature coefficient (TCR): typically ±50 ~ ±100 ppm/°C
  • Rated power: ~0.25W (at 70°C ambient, for SFR16S)
  • Low voltage coefficient and excellent long-term stability

Functional Description

  • Provides precise resistance for current limiting, voltage division, and signal conditioning
  • Low noise makes it suitable for analog and precision circuits
  • Metal film structure ensures minimal drift over time and temperature

Design Notes

  • Prefer metal film over carbon film for precision and low-noise applications
  • Ensure power derating above 70°C ambient
  • Maintain adequate spacing for high-voltage applications
  • Avoid excessive mechanical stress during PCB assembly
  • Consider TCR impact in precision analog circuits

Typical Applications

  • Precision analog circuits
  • Voltage dividers and reference networks
  • Signal conditioning and filtering
  • Audio circuits (low noise requirement)
  • Industrial and consumer electronics

How to Choose This Resistor

  • Select tolerance based on required accuracy (e.g., ±1% for precision)
  • Check power rating vs. actual dissipation with margin
  • Consider TCR for temperature-sensitive designs
  • Choose metal film for stability vs. carbon film for cost-sensitive designs

Alternative / Equivalent Products

  • Yageo MFR series (metal film resistor)
  • Vishay MRS25 series (higher power alternative)
  • KOA Speer MF1/4 series
  • Carbon film resistors (lower cost, higher noise alternative)

Other data sheets are available within the file:

SFR16S0004872FR500, SFR2500, SFR25H0

SFR16S0 Datasheet PDF Download


SFR16S0 pdf

2SK3599 Datasheet PDF – 100V, 29A, MOSFET, Transistor

Part Number: 2SK3599

Function: 100V, 29A, N-Channel, MOSFET

Package: TO-220F Type

Manufacturer: Fuji Electric

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2SK3599 datasheet pdf

Description

The 2SK3599 is a 100V N-channel silicon power MOSFET designed for high-speed switching and efficient power control applications. It features low on-resistance, avalanche ruggedness, and low gate drive requirements, making it suitable for high-efficiency switching designs. This device is commonly used in switching regulators, UPS systems, and DC-DC converter circuits.

Features

  • High-speed switching capability
  • Low drain-source ON resistance for improved efficiency
  • No secondary breakdown characteristic
  • Low gate drive power requirement
  • Avalanche-proof design for enhanced reliability
  • High current handling capability up to 29A

Pinout

2SK3599 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 29 A
Power Dissipation Pd 2.16 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Low RDS(on) enables efficient conduction with reduced power loss
  • High-speed switching requires careful PCB layout to minimize parasitics
  • Avalanche capability improves robustness under transient conditions
  • Ensure adequate thermal path despite relatively low package dissipation rating
  • Gate resistor may be used to balance switching speed and EMI

Typical Circuit Usage

  • Switching regulator power stages
  • DC-DC converter switching elements
  • UPS inverter and power control circuits
  • Load switching in medium-voltage systems
  • Synchronous rectification applications

How to Choose This Part

  • Select for applications up to 100V with high current demand
  • Ideal for high-efficiency switching designs
  • Ensure thermal dissipation is managed within limits
  • Verify gate drive compatibility for optimal switching
  • Consider avalanche rating for inductive load environments

Applications

  • Switching regulators
  • UPS (Uninterruptible Power Supply)
  • DC-DC converters
  • Power management systems
  • Industrial switching circuits

Alternative / Equivalent Products

  • IRF540N (100V power MOSFET)
  • STP55NF06 (low RDS(on) MOSFET)
  • FQP30N06L (logic-level alternative)
  • 2SK3563 (similar N-channel MOSFET)
  • IPP110N10N3 (high-efficiency MOSFET)

Other data sheets are available within the file: K3599, 2SK359901MR, K3599-01MR

2SK3599 Datasheet PDF Download