Part Number: 2SA1075
Function : Silicon PNP Ring Emitter Transistor (RET)
Package: RM-60 Type
Manufacturer: Fujitsu Media Devices Limited
Image:
Description
The 2SA1075 / 2SA1076 are silicon PNP general purpose, high power switching transistors fabricated with Fujitsu’s unique Ring Emitter Transistor (RET) technology, RET devices are constructed with multiple emitters connected through diffused ballast resistors which provide uniform current density. This structure permits the design of high power transistors with exceptional swiching characteristics and frequency response in high current applications.
Features
1. High fT = 60 MHz (typ.)
2. Ultra fast switching speed
3. Excellenet Safe Operating Area
4. Improved reverse Second-Breakdown Capability
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 120 V
2. Collector to Emitter Voltage: Vceo = 7 V
3. Emitter to Base Voltage: Vebo = 120 V
4. Collector Current: Ic = 12 A
5. Total Dissipation : Pc = 120 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Other data sheets are available within the file: A1075, 2SA1076, A1076
2SA1075 Datasheet PDF
