Part Number: 2SC3808
Function: 60V, 2A, NPN Transistor
Package: TO-126LP Type
Manufacturer: SANYO (Panasonic)
Image and Pinouts:
Description
The 2SC3808 is 60V, 2A, NPN Epitaxial Planar Silicon Transistor.
Features
1. Large current capacity (IC=2A).
2. Adoption of MBIT process.
3. High DC current gain (hFE=800 to 3200).
4. Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
5. High VEBO(VEBO≥15V).
Absolute Maximum Ratings at Ta = 25°C
1. Collector-to-Base Voltage : VCBO = 80 V
2. Collector-to-Emitter Voltage : VCEO = 60 V
3. Emitter-to-Base Voltage : VEBO = 15 V
4. Collector Current : IC = 2 A
5. Collector Current (Pulse) : ICP = 4 A
6. Collector Dissipation : PC = 1.2 W
Applications:
1. High hFE, Low-Frequency General-Purpose Amplifier
Other data sheets are available within the file: C3808
2SC3808 Datasheet PDF Download
