This NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
Part Number: 2SD822, D822
Function: 600V, 7A, NPN Transistor
Package: TO-3 Type
Manufacturer: Toshiba
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Description
This is 1500V, Silicon NPN transistor. The 2SD822 is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
Features of 2SD822
1. High Voltage: Vcbo = 1500V
2. Low Saturation Voltage
3. High Speed
4. Glass Passivated Collector-Base Junction.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 7 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Advantages
1. High current gain makes it suitable for use in low-power amplifier circuits.
2. Low collector-emitter saturation voltage reduces power dissipation and improves efficiency in switching applications.
Applications:
1. Color TV Horizontal Output