2SD822 Datasheet – 600V, 7A, NPN, TO-3 – Toshiba

This NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

Part Number: 2SD822, D822

Function: 600V, 7A, NPN Transistor

Package: TO-3 Type

Manufacturer: Toshiba

Image:

2SD822

Description

This is 1500V, Silicon NPN transistor. The 2SD822 is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

Features of 2SD822

1. High Voltage: Vcbo = 1500V

2. Low Saturation Voltage

3. High Speed

4. Glass Passivated Collector-Base Junction.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 7 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

2SD822 Datasheet PDF

Advantages

1. High current gain makes it suitable for use in low-power amplifier circuits.

2. Low collector-emitter saturation voltage reduces power dissipation and improves efficiency in switching applications.

 

Applications:

1. Color TV Horizontal Output

2SD822 Datasheet PDF

2SD822 pdf

 

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