This NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
Part Number: 2SD822, D822
Function: 600V, 7A, NPN Transistor
Package: TO-3 Type
Manufacturer: Toshiba
Image:
Description
This is 1500V, Silicon NPN transistor. The 2SD822 is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It is optimized for high-voltage switching, fast transition times, and robust operation under inductive load conditions.
Features of 2SD822
1. High collector-base voltage capability (VCBO = 1500V)
2. ow collector-emitter saturation voltage
3. High-speed switching
4. Glass Passivated Collector-Base Junction.
Pinout
Absolute Maximum Ratings (Ta = 25 °C)
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 1500 | V |
| Collector-Emitter Voltage | VCEO | 600 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 7 | A |
| Emitter Current | IE | -7 | A |
| Power Dissipation (Tc = 25°C) | PC | 50 | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -55 to 150 | °C |
Electrical Characteristics
Advantages
1. High current gain makes it suitable for use in low-power amplifier circuits.
2. Low collector-emitter saturation voltage reduces power dissipation and improves efficiency in switching applications.
Application
- CRT horizontal deflection output stage
- Flyback transformer driver circuits
- High-voltage pulse generators
- Switching power stages with inductive loads
2SD822 Datasheet PDF
