What is K3569?
This is one of the types of MOSFETs and is a kind of transistor.
This is a MOSFET transistor designed for high-voltage, high-current switching applications. It has a maximum drain-source voltage rating of 600V and a maximum continuous drain current rating of 10A. The transistor is housed in a TO-220 package, making it suitable for use in a variety of power electronic circuits.
Part Number: K3569
Function: 600V, 10A, N-Channel MOSFET
Packagek : TO-220 Type
Manufacturer: Toshiba
See the preview image and the PDF file for more information.
Image
Description
This is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor.
It is high voltage and current ratings, which make it suitable for use in high-power applications such as motor control, power supplies, and lighting systems. It also has a low on-state resistance, which results in low power dissipation and improved efficiency.
This is relatively high gate charge, which may limit its switching speed in some applications. Additionally, like all MOSFETs, the K3569 is sensitive to electrostatic discharge (ESD) and may require additional protection circuitry to prevent damage during handling.
Features
1. Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
K3569 pinout
Absolute Maximum Ratings (Ta =25°C)
1. Drain-source voltage : VDSS = 600 V
2. Drain-gate voltage (RGS =20 kΩ): VDGR = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 10 A
5. Drain power dissipation (Tc =25°C) : PD = 45 W
6. Single pulse avalanche energy : EAS = 363 mJ
7. Avalanche current : IAR = 10 A
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
Applications:
K3569 Datasheet PDF Download
Other data sheets are available within the file: 2SK3569
