Toshiba

30F125 Datasheet PDF – GT30F125, 330V, IGBT – Toshiba

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Part Number: 30F125, GT30F125

Function: LCD Plasma common tube, 200A, 330V IGBT

Package: TO-220F Type

Manufactuerers :  Toshiba

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30F125

Description

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

Features

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

Product Lineup

30F125 Datasheet

Pinout

30F125 pinout

Others IGBTs

IGBT Datasheet

Applications

1. Wide range of devices and systems, including inverters

2. Switching power supplies, UPS systems

3. Electric vehicle controllers, induction heating, and more.

 

Other data sheets are available within the file: 3OF125, GT3OF125

30F125 Datasheet Download

30F125 pdf

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B1642 Datasheet – 60V, 4A, PNP Transistor – 2SB1642

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Part Number : 2SB1642

Function: -60V, -4A, PNP Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba

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transistor B1642 pdf

Description

The B1642 is a high-power PNP silicon transistor in a TO-220F (or similar) package, designed especially for audio frequency output stages. It supports a collector current up to –4 A and a breakdown voltage of –60 V, and features low saturation voltage for efficient switching. It’s typically used in audio amplifiers, power amplifier stages, and complementary transistor pairs in push-pull outputs.

 

Features

  • Collector–Emitter breakdown voltage VCEO = –60 V (minimum)
  • Collector current (continuous) IC = –4 A
  • Low saturation voltage VCE(sat) = –1.5 V (max) at IC = –2.5 A, IB = –0.25 A
  • Wide DC current gain: hFE = 100 to 320 at moderate currents
  • Transition frequency fT ≈ 9 MHz
  • Collector power dissipation PC = 25 W (at case)
  • Collector–Base voltage VCBO = –60 V
  • Emitter–Base breakdown voltage VEBO = –7 V
  • Capacitance (Cob): ~50 pF (VCB = –10 V, f = 1 MHz)

 

Absolute Maximum Ratings (Ta = 25 °C)

Parameter Symbol Value Unit
Collector–Base voltage VCBO –60 V
Collector–Emitter voltage VCEO –60 V
Emitter–Base voltage VEBO –7 V
Collector current, continuous IC –4 A
Base current, continuous IB –1 A
Power dissipation (case) PC 25 W
Maximum junction temperature TJ 150 °C
Storage temperature Tstg –55 to +150 °C

B1642 pinout

 

Applications

  • Output stage in audio power amplifiers (PNP side)
  • Complementary transistor in push-pull amplifier topologies
  • Driver stage in class AB amplifiers
  • Power amplification for speaker drivers and stereo systems
  • General PNP high current switching roles in audio circuits

Alternative / Equivalent Products

  • 2SB1640 – a close PNP transistor variant with similar specs
  • 2SB1667 – alternative PNP transistor in audio designs
  • 2SA1943 (if complementary or higher voltage rating required)
  • BD140 / BD139 (lower power but common PNP alternatives)
  • MJE2955 – another PNP power transistor with somewhat higher voltage headroom

B1642 Datasheet