Part Number: C2120
Function: 30V, 0.8A, NPN Transistor
Package: TO-92 Type
Manufacturer: JIANGSU CHANGJIANG
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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) Features z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 0.8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Test conditions IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA Min Typ Max Unit 35 V 30 V 5V 0.1 μA 0.1 μA 0.1 μA 100 320 0.5 V 0.8 V 13 pF 100 MHz CLASSIFICATION OF hFE RANK RANGE O 100-200 Y 160-320 B,Dec,2011 Typical Characterisitics 2SC2120 COLLECTOR CURRENT IC (mA) Static Characteristic 200 1mA 900uA 800uA 160 700uA 600uA 120 500uA COMMON EMITTER Ta=25℃ 400uA 80 300uA 200uA 40 IB=100uA 0 0.0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) V —— I 600 CEsat C β=25 300 100 Ta=100℃ Ta=25℃ 30 DC CURRENT GAIN hFE h —— I 1000 FE C COMMON EMITTER VCE=1V Ta=100℃ Ta=25℃ 100 10 13 10 30 100 300 800 COLLECTOR CURRENT IC (mA) V —— I BEsat C 2 β=25 1 Ta=25℃ Ta=100℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) 10 13 10 30 100 300 COLLECTOR CURRENT IC (mA) I —— V 800 C BE COMMON EMITTER 300 VCE=1V Ta=100℃ 100 800 30 Ta=25℃ 10 3 1 0.2 500 VCE=5V Ta=25℃ 0.4 0.6 0.8 BASE-EMMITER VOLTAGE VBE (V) f —— I TC 1.0 100 10 13 10 30 100 COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) CAPACITANCE C (pF) 0.1 1 100 30 10 3 10 30 100 300 COLLECTOR CURRENT IC (mA) 800 C / C —— V / V ob ib CB EB Cib f=1MHz IE=0/ IC=0 Ta=25℃ Cob 3 1 0.1 800 0.3 1 3 REVERSE VOLTAGE V (V) P C —— T a 10 20 600 400 200 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) B,Dec,2011 TRANSITION FREQUENCY fT (MHz) […]